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| Demand quantity | Target price | ||
| Contact number | name | ||
| company | |||
| -RoHS | Lead free / RoHS Compliant |
| -Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 20A, 10V |
| -PCN Assembly/Origin | TrenchMOS Silicon Process 19/Sep/2014 TrenchMOS Silicon Process Revision 17/Jan/2015 |
| -Drain to Source Voltage (Vdss) | 40V |
| -Standard Package | 1 |
| -Gate Charge (Qg) @ Vgs | 28.9nC @ 10V |
| -Packaging | Cut Tape (CT) |
| -Online Catalog | N-Channel Standard FETs |
| -Family | FETs - Arrays |
| -Mounting Type | Surface Mount |
| -FET Feature | Standard |
| -Package / Case | SOT-1205, 8-LFPAK56 |
| -Power - Max | 64W |
| -Supplier Device Package | LFPAK56D |
| -PCN Packaging | Leader/Trailer Update 03/Apr/2015 |
| -Current - Continuous Drain (Id) @ 25掳C | 40A |
| -FET Type | 2 N-Channel (Dual) |
| -Series | TrenchMOS鈩�/a> |
| -Vgs(th) (Max) @ Id | 4V @ 1mA |
| -Input Capacitance (Ciss) @ Vds | 1947pF @ 25V |
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