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PMBFJ177,215

PMBFJ174 Series 30 V 20 mA P-Ch silicon Field-effect Transistor - SOT-23-3

Manufacturer NXP Semiconductors
MPN PMBFJ177,215
SPQ 1
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet --

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Product parameter

-RoHS Lead free / RoHS Compliant
-Power - Max 300mW
-Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V
-Supplier Device Package SOT-23 (TO-236AB)
-PCN Packaging Date Code Extended 18/Jul/2013 Lighter Reels 02/Jan/2014
-Resistance - RDS(On) 300 Ohm
-Packaging   Cut Tape (CT)  
-Online Catalog P-Channel JFETs
-Mounting Type Surface Mount
-Package / Case TO-236-3, SC-59, SOT-23-3
-Voltage - Breakdown (V(BR)GSS) 30V
-Drain to Source Voltage (Vdss) 30V
-Standard Package   1
-Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA
-PCN Design/Specification Resin Hardener 02/Jul/2013
-FET Type P-Channel
-Family JFETs (Junction Field Effect)
-Input Capacitance (Ciss) @ Vds 8pF @ 10V (VGS)

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