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PMDT290UNE,115

SOT666/20 V, 800 mA dual N-channel Trench MOSFET/12NC:934065732115

Manufacturer Nexperia
MPN PMDT290UNE,115
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet PMDT290UNE,115.pdf

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-563, SOT-666
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 800mA
-Gate Charge (Qg) @ Vgs 0.68nC @ 4.5V
-FET Type 2 N-Channel (Dual)
-Family FETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 380 mOhm @ 500mA, 4.5V
-Power - Max 500mW
-Supplier Device Package SOT-666
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Online Catalog N-Channel Logic Level Gate FETs
-Vgs(th) (Max) @ Id 950mV @ 250µA
-Input Capacitance (Ciss) @ Vds 83pF @ 10V

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