English 简体中文 日本語

PSMN1R8-30PL,127

TO220AB/N-channel 30 V, 1.8 mO logic level MOSFET/12NC:934064002127

Manufacturer Nexperia
MPN PSMN1R8-30PL,127
SPQ 1000
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet PSMN1R8-30PL,127.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Logic Level Gate
-Package / Case TO-220-3
-Power - Max 270W
-Supplier Device Package TO-220AB
-Gate Charge (Qg) @ Vgs 170nC @ 10V
-Online Catalog N-Channel Logic Level Gate FETs
-Mounting Type Through Hole
-Input Capacitance (Ciss) @ Vds 10180pF @ 12V
-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 1.8 mOhm @ 25A, 10V
-PCN Assembly/Origin Additional Wafer Fab Source 28/Apr/2014
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 100A (Tc)
-Gate Charge (Qg) @ Vgs 170nC @ 10V
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Mounting Type Through Hole
-Rds On (Max) @ Id, Vgs 1.8 mOhm @ 25A, 10V
-PCN Assembly/Origin Additional Wafer Fab Source 28/Apr/2014
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 100A (Tc)
-FET Type MOSFET N-Channel, Metal Oxide
-Family FETs - Single
-Vgs(th) (Max) @ Id 2.15V @ 1mA
-Packaging Tube  
-FET Feature Logic Level Gate
-Package / Case TO-220-3
-Power - Max 270W
-Supplier Device Package TO-220AB
-Standard Package   50
-Packaging   Tube  
-Online Catalog N-Channel Logic Level Gate FETs
-Vgs(th) (Max) @ Id 2.15V @ 1mA
-Input Capacitance (Ciss) @ Vds 10180pF @ 12V

Copyright © 1997-2013 NetEase. All Rights Reserved.