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TRS12E65C,S1Q

DIODE SCHOTTKY 650V 12A TO220-2L

Manufacturer Toshiba
MPN TRS12E65C,S1Q
SPQ 50
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Operating Temperature - Junction 175°C (Max)
-Capacitance @ Vr, F 65pF @ 650V, 1MHz
-Supplier Device Package TO-220-2L
-Packaging   Tube  
-Speed Fast Recovery =< 500ns, > 200mA (Io)
-Online Catalog Schottky Barrier Diodes
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.7V @ 12A
-Current - Average Rectified (Io) 12A (DC)
-Package / Case TO-220-2
-Standard Package   50
-Diode Type Silicon Carbide Schottky
-Current - Reverse Leakage @ Vr 90µA @ 170V
-Family Diodes, Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 650V

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