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HN3C51F-GR(TE85L,F

TRANS 2NPN 120V 0.1A SM6

Manufacturer Toshiba
MPN HN3C51F-GR(TE85L,F
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet HN3C51F-GR(TE85L,F.pdf

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
-Package / Case SC-74, SOT-457
-Transistor Type 2 NPN (Dual)
-Standard Package   1
-Packaging   Cut Tape (CT)  
-Voltage - Collector Emitter Breakdown (Max) 120V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
-Frequency - Transition 100MHz
-Power - Max 300mW
-Supplier Device Package SM6
-Current - Collector (Ic) (Max) 100mA
-Online Catalog NPN Transistor Arrays
-Family Transistors (BJT) - Arrays
-Current - Collector Cutoff (Max) 100nA (ICBO)

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