| -Collector-Emitter Saturation Voltage: |
3.3 V |
| -Packaging: |
Tube |
| -Minimum Operating Temperature: |
- 55 C |
| -Pd - Power Dissipation: |
625 W |
| -Gate-Emitter Leakage Current: |
100 nA |
| -Height: |
5.31 mm |
| -Mounting Style: |
Through Hole |
| -Continuous Collector Current Ic Max: |
100 A |
| -Continuous Collector Current: |
100 A |
| -Factory Pack Quantity: |
28 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
1.2 kV |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
16.26 mm |
| -Continuous Collector Current at 25 C: |
100 A |
| -Operating Temperature Range: |
- 55 C to + 150 C |
| -Tradename: |
POWER MOS 7 IGBT |
| -Package / Case: |
TO-247-3 |
| -Configuration: |
Single |
| -Unit Weight: |
1.340411 oz |
| -Length: |
21.46 mm |
| -Manufacturer: |
Microsemi |
| -Brand: |
Microsemi |
| -Product Category: |
IGBT Transistors |
| -Maximum Gate Emitter Voltage: |
30 V |
