| -Collector-Emitter Saturation Voltage: |
2.5 V |
| -Packaging: |
Tube |
| -Minimum Operating Temperature: |
- 55 C |
| -Pd - Power Dissipation: |
500 W |
| -Gate-Emitter Leakage Current: |
100 nA |
| -Height: |
5.21 mm |
| -Mounting Style: |
Through Hole |
| -Continuous Collector Current Ic Max: |
117 A |
| -Continuous Collector Current: |
117 A |
| -Factory Pack Quantity: |
44 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
900 V |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
20.5 mm |
| -Continuous Collector Current at 25 C: |
117 A |
| -Operating Temperature Range: |
- 55 C to + 150 C |
| -Tradename: |
POWER MOS 8 |
| -Package / Case: |
TO-264-3 |
| -Configuration: |
Single |
| -Unit Weight: |
0.373904 oz |
| -Length: |
26.49 mm |
| -Manufacturer: |
Microsemi |
| -Brand: |
Microsemi |
| -Product Category: |
IGBT Transistors |
| -Maximum Gate Emitter Voltage: |
30 V |
