| -Packaging: |
Tube |
| -Qg - Gate Charge: |
414 nC |
| -Pd - Power Dissipation: |
625 W |
| -Package / Case: |
TO-247-3 |
| -Configuration: |
Single |
| -Mounting Style: |
Through Hole |
| -Number of Channels: |
1 Channel |
| -Manufacturer: |
STMicroelectronics |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
STMicroelectronics |
| -Product Category: |
MOSFET |
| -Rise Time: |
11 ns |
| -Transistor Type: |
1 N-Channel |
| -ECCN |
EAR99 |
| -Rds On - Drain-Source Resistance: |
15 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
4 V |
| -Vgs - Gate-Source Voltage: |
25 V |
| -Unit Weight: |
1.340411 oz |
| -Fall Time: |
82 ns |
| -Series: |
MDmesh M5 |
| -Factory Pack Quantity: |
30 |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
138 A |
| -Vds - Drain-Source Breakdown Voltage: |
650 V |
| -Maximum Operating Temperature: |
+ 150 C |
