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IFN5911

Manufacturer InterFET
MPN IFN5911
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet IFN5911.pdf

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Product parameter

-Packaging: Reel
-Drain-Source Current at Vgs=0: 40 mA
-Pd - Power Dissipation: 500 mW
-Factory Pack Quantity: 1
-Brand: InterFET
-RoHS:  Details
-Vgs - Gate-Source Breakdown Voltage: - 25 V
-Id - Continuous Drain Current: 5 mA
-Configuration: Dual
-Mounting Style: Through Hole
-Forward Transconductance - Min: 3000 uS
-Manufacturer: InterFET
-Transistor Polarity: N-Channel
-Technology: Si
-Part # Aliases: 2N5911
-Package / Case: TO-78-3
-Product Category: JFET
-Vds - Drain-Source Breakdown Voltage: 10 V
-Gate-Source Cutoff Voltage: - 5 V

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