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BS2100F-E2

600V High voltage High & Low-side, Gate Driver

Manufacturer ROHM Semiconductor
MPN BS2100F-E2
SPQ 2500
ECCN EAR99
Schedule B --
RoHS --
Datasheet BS2100F-E2.pdf

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Product parameter

-Output Voltage: 618 V, 18 V
-Packaging: Reel
-Minimum Operating Temperature: - 40 C
-Supply Voltage - Min: 10 V
-Supply Voltage - Max: 18 V
-Unit Weight: 0.030018 oz
-Fall Time: 100 ns
-Manufacturer: ROHM Semiconductor
-Series: BS2100F
-Brand: ROHM Semiconductor
-Operating Supply Current: 120 uA
-Number of Drivers: 2 Driver
-Rise Time: 200 ns
-Maximum Operating Temperature: + 125 C
-Operating Temperature -40°C ~ 150°C (TJ)
-Driven Configuration Half-Bridge
-Gate Type N-Channel MOSFET
-Mounting Type Surface Mount
-Supplier Device Package 8-SOP
-Voltage - Supply 10 V ~ 18 V
-High Side Voltage - Max (Bootstrap) 600V
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Product: IGBT, MOSFET Gate Drivers
-Maximum Turn-Off Delay Time: 330 ns
-Pd - Power Dissipation: 670 mW
-Package / Case: SOP-8
-Configuration: High Side, Low Side
-Mounting Style: SMD/SMT
-Output Current: 60 mA, 130 mA
-Number of Outputs: 2 Output
-Factory Pack Quantity: 2500
-RoHS:  Details
-Product Category: Gate Drivers
-Maximum Turn-On Delay Time: 320 ns
-Type: High and Low Side Gate Driver
-ECCN EAR99
-Input Type Non-Inverting
-Rise / Fall Time (Typ) 200ns, 100ns
-Categories Integrated Circuits (ICs) -> PMIC - Gate Drivers
-Current - Peak Output (Source, Sink) 60mA, 130mA
-Package / Case 8-SOIC (0.173\", 4.40mm Width)
-Part Status Not For New Designs
-Lead Free Status / RoHS Status 1
-Logic Voltage - VIL, VIH 1V, 2.6V

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