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RGT8NS65DGTL

IGBT 650V 8A 65W TO-263S

Manufacturer ROHM Semiconductor
MPN RGT8NS65DGTL
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet RGT8NS65DGTL.pdf RGT8NS65DGTL.pdf RGT8NS65DGTL.pdf

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Product parameter

-Current - Collector Pulsed (Icm) 12A
-Power - Max 65W
-IGBT Type Trench Field Stop
-Td (on/off) @ 25°C 17ns/69ns
-Part Status Active
-Manufacturer Rohm Semiconductor
-Gate Charge 13.5nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
-Packaging Tape & Reel (TR)
-Lead Free Status / RoHS Status 1
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition 400V, 4A, 50 Ohm, 15V
-Supplier Device Package LPDS (TO-263S)
-Current - Collector (Ic) (Max) 8A
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 40ns
-Voltage - Collector Emitter Breakdown (Max) 650V
-Mounting Type Surface Mount
-Input Type Standard
-Operating Temperature -40°C ~ 175°C (TJ)
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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