| -Packaging: |
Reel |
| -Qg - Gate Charge: |
8.3 nC, 34 nC |
| -Pd - Power Dissipation: |
2.4 W, 3.4 W |
| -Package / Case: |
PQFN-18 |
| -Configuration: |
Dual |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
5.9 ns, 14 ns |
| -Forward Transconductance - Min: |
17 S, 106 S |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Infineon Technologies |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
13 A, 28 A |
| -Rise Time: |
15 ns, 35 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Rds On - Drain-Source Resistance: |
8.6 mOhms, 3 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
2.35 V |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
12 ns, 22 ns |
| -Manufacturer: |
Infineon |
| -Factory Pack Quantity: |
4000 |
| -Typical Turn-Off Delay Time: |
12 ns, 28 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
30 V, 30 V |
| -Transistor Type: |
2 N-Channel |
| -ECCN |
EAR99 |
