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SI3993DV-T1-GE3

MOSFET 2P-CH 30V 1.8A 6-TSOP

Manufacturer Vishay
MPN SI3993DV-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 1.8A
-Part Status Active
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Rds On (Max) @ Id, Vgs 133 mOhm @ 2.2A, 10V
-Power - Max 830mW
-Supplier Device Package 6-TSOP
-Gate Charge (Qg) @ Vgs 5nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type 2 P-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Tape & Reel (TR)

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