| -Output Power: |
100 W |
| -Packaging: |
Reel |
| -Operating Temperature Range: |
- 55 C to + 150 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
5 V |
| -Mounting Style: |
Through Hole |
| -Fall Time: |
4.2 ns |
| -Forward Transconductance - Min: |
2 mS |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
9 A |
| -Rise Time: |
4.3 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Operating Frequency: |
100 MHz |
| -Minimum Operating Temperature: |
- 55 C |
| -Pd - Power Dissipation: |
180 W |
| -Package / Case: |
TO-247-3 |
| -Vgs - Gate-Source Voltage: |
30 V |
| -Unit Weight: |
1.340411 oz |
| -Gain: |
15 dB |
| -Manufacturer: |
Microsemi |
| -Factory Pack Quantity: |
14 |
| -Brand: |
Microsemi |
| -Product Category: |
RF MOSFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
500 V |
| -Type: |
RF Power MOSFET |
| -ECCN |
EAR99 |
