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2N5020

Manufacturer InterFET
MPN 2N5020
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Packaging: Reel
-Drain-Source Current at Vgs=0: - 1.2 mA
-Pd - Power Dissipation: 500 mW
-Factory Pack Quantity: 1
-Brand: InterFET
-Package / Case: TO-18-3
-Product Category: JFET
-Vds - Drain-Source Breakdown Voltage: - 15 V
-Gate-Source Cutoff Voltage: 1.5 V
-Forward Transconductance - Min: 1 mS
-Manufacturer: InterFET
-Transistor Polarity: P-Channel
-Technology: Si
-RoHS:  Details
-Vgs - Gate-Source Breakdown Voltage: 25 V
-Id - Continuous Drain Current: 1 nA
-Configuration: Single
-Mounting Style: Through Hole

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