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SI5513DC-T1-E3

MOSFET N/P-CH 20V 3.1A 1206-8

制造商 Vishay
制造商零件编号 SI5513DC-T1-E3
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 --

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产品参数

-FET Feature Logic Level Gate
-Package / Case 8-SMD, Flat Lead
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 3.1A, 2.1A
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.5V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Rds On (Max) @ Id, Vgs 75 mOhm @ 3.1A, 4.5V
-Power - Max 1.1W
-Supplier Device Package 1206-8 ChipFET™
-Gate Charge (Qg) @ Vgs 6nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type N and P-Channel
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Cut Tape (CT)

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