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STB18N65M5

N-Channel 650 V 0.22 Ohm 31 nC 110 W Silicon SMT Mosfet - TO-263

Manufacturer STMicroelectronics
MPN STB18N65M5
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet STB18N65M5.pdf

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Product parameter

-FET Feature Standard
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Drain to Source Voltage (Vdss) 650V
-Current - Continuous Drain (Id) @ 25°C 15A (Tc)
-Part Status Active
-Manufacturer STMicroelectronics
-Series MDmesh™ V
-Vgs(th) (Max) @ Id 5V @ 250µA
-Operating Temperature 150°C (TJ)
-Packaging Cut Tape (CT)
-Rds On (Max) @ Id, Vgs 220 mOhm @ 7.5A, 10V
-Power - Max 110W
-Supplier Device Package D²PAK
-Gate Charge (Qg) @ Vgs 31nC @ 10V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 1240pF @ 100V
-ECCN EAR99

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