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RQ3E100MNTB1

MOSFET N-CH 30V 10A HSMT8

Manufacturer ROHM Semiconductor
MPN RQ3E100MNTB1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet RQ3E100MNTB1.pdf

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Product parameter

-FET Feature Standard
-Package / Case 8-PowerVDFN
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 10A (Ta)
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 520pF @ 15V
-Rds On (Max) @ Id, Vgs 12.3 mOhm @ 10A, 10V
-Power - Max 2W
-Supplier Device Package 8-HSMT (3.2x3)
-Gate Charge (Qg) @ Vgs 9.9nC @ 10V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Vgs(th) (Max) @ Id 2.5V @ 1mA
-Operating Temperature 150°C (TJ)
-Packaging Tape & Reel (TR)

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