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SI5504BDC-T1-E3

Dual N & P Channel 30 V 0.065/0.014 Ohms SMT Power Mosfet - 1206-8 ChipFET

制造商 Vishay
制造商零件编号 SI5504BDC-T1-E3
标准包装 1
ECCN EAR99
Schedule B --
RoHS --
规格说明书 SI5504BDC-T1-E3.pdf

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产品参数

-FET Feature Logic Level Gate
-Package / Case 8-SMD, Flat Lead
-Drain to Source Voltage (Vdss) 30V
-Current - Continuous Drain (Id) @ 25°C 4A, 3.7A
-Part Status Active
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Cut Tape (CT)
-Rds On (Max) @ Id, Vgs 65 mOhm @ 3.1A, 10V
-Power - Max 3.12W, 3.1W
-Supplier Device Package 1206-8 ChipFET™
-Gate Charge (Qg) @ Vgs 7nC @ 10V
-Category Discrete Semiconductor Products
-FET Type N and P-Channel
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 220pF @ 15V
-ECCN EAR99

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