| -Power - Max |
4.17W |
| -Rds On (Max) @ Id, Vgs |
20 mOhm @ 3A, 5V |
| -Drain to Source Voltage (Vdss) |
20V |
| -Current - Continuous Drain (Id) @ 25°C |
10.9A |
| -Part Status |
Active |
| -Manufacturer |
NXP USA Inc. |
| -Series |
TrenchMOS™ |
| -Vgs(th) (Max) @ Id |
1.5V @ 250µA |
| -Operating Temperature |
-55°C ~ 150°C (TJ) |
| -Packaging |
Tape & Reel (TR) |
| -Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| -FET Feature |
Logic Level Gate |
| -Supplier Device Package |
8-SO |
| -Gate Charge (Qg) @ Vgs |
15.3nC @ 5V |
| -Category |
Discrete Semiconductor Products |
| -FET Type |
2 N-Channel (Dual) |
| -Family |
Transistors - FETs, MOSFETs - Arrays |
| -Mounting Type |
Surface Mount |
| -Input Capacitance (Ciss) @ Vds |
950pF @ 10V |
| -ECCN |
EAR99 |
