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APT100GN120B2G

Transistor: IGBT; Field Stop; 1.2kV; 100A; 960W; T-Max

Manufacturer Microchip Technology
MPN APT100GN120B2G
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Current - Collector Pulsed (Icm) 300A
-Power - Max 960W
-IGBT Type Trench Field Stop
-Td (on/off) @ 25°C 50ns/615ns
-Part Status Active
-Manufacturer Microsemi Corporation
-Voltage - Collector Emitter Breakdown (Max) 1200V
-Mounting Type Through Hole
-Switching Energy 11mJ (on), 9.5mJ (off)
-Packaging Tube
-Package / Case TO-247-3 Variant
-Test Condition 800V, 100A, 1 Ohm, 15V
-Supplier Device Package *
-Current - Collector (Ic) (Max) 245A
-Category Discrete Semiconductor Products
-Gate Charge 540nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
-Input Type Standard
-ECCN EAR99

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