| -Collector-Emitter Saturation Voltage: |
2.1 V |
| -Packaging: |
Tube |
| -Minimum Operating Temperature: |
- 55 C |
| -Pd - Power Dissipation: |
360 W |
| -Gate-Emitter Leakage Current: |
100 nA |
| -Height: |
9.6 mm |
| -Unit Weight: |
1.340411 oz |
| -Length: |
38.23 mm |
| -Manufacturer: |
IXYS |
| -Factory Pack Quantity: |
10 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
600 V |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
25.42 mm |
| -Continuous Collector Current at 25 C: |
78 A |
| -Operating Temperature Range: |
- 55 C to + 150 C |
| -Tradename: |
GenX3 |
| -Package / Case: |
SOT-227B-4 |
| -Mounting Style: |
SMD/SMT |
| -Continuous Collector Current Ic Max: |
360 A |
| -Continuous Collector Current: |
78 A |
| -Series: |
IXGN72N60 |
| -Brand: |
IXYS |
| -Product Category: |
IGBT Transistors |
| -Maximum Gate Emitter Voltage: |
+/- 20 V |
| -ECCN |
EAR99 |
