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SI4200DY-T1-GE3

MOSFET 2N-CH 25V 8A 8SOIC

制造商 Vishay
制造商零件编号 SI4200DY-T1-GE3
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 SI4200DY-T1-GE3.pdf

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产品参数

-FET Feature Logic Level Gate
-Package / Case 8-SOIC (0.154", 3.90mm Width)
-Drain to Source Voltage (Vdss) 25V
-Current - Continuous Drain (Id) @ 25°C 8A
-Part Status Active
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 2.2V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 25 mOhm @ 7.3A, 10V
-Power - Max 2.8W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 12nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 415pF @ 13V

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