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SIA920DJ-T1-GE3

MOSFET 2N-CH 8V 4.5A SC-70

制造商 Vishay
制造商零件编号 SIA920DJ-T1-GE3
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 SIA920DJ-T1-GE3.pdf

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产品参数

-Number of Channels: 2 Channel
-Rds On - Drain-Source Resistance: 22 mOhms
-Series: SIA
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 3000
-Brand: Vishay Semiconductors
-Tradename: TrenchFET
-Package / Case: SC-70-6
-Id - Continuous Drain Current: 4.5 A
-Configuration: Dual
-Unit Weight: 0.000988 oz
-Mounting Style: SMD/SMT
-Packaging: Reel
-Manufacturer: Vishay
-Pd - Power Dissipation: 7.8 W
-Transistor Polarity: N-Channel
-Technology: Si
-Part # Aliases: SIA920DJ-GE3
-RoHS:  Details
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: 8 V
-Vgs - Gate-Source Voltage: 5 V
-Transistor Type: 2 N-Channel
-Maximum Operating Temperature: + 150 C

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