IFN860

制造商 InterFET 制造商零件编号 IFN860 标准包装 1 ECCN -- Schedule B -- RoHS -- 规格说明书 --

询价

需求数量		目标价格
联系电话		姓名
公司		邮箱

产品参数

-Forward Transconductance - Min:	25 mS
-Manufacturer:	InterFET
-Transistor Polarity:	N-Channel
-Technology:	Si
-RoHS:	Details
-Vgs - Gate-Source Breakdown Voltage:	- 20 V
-Id - Continuous Drain Current:	100 uA
-Configuration:	Dual
-Mounting Style:	Through Hole
-Drain-Source Current at Vgs=0:	10 mA
-Pd - Power Dissipation:	400 mW
-Factory Pack Quantity:	1
-Brand:	InterFET
-Package / Case:	TO-71-3
-Product Category:	JFET
-Vds - Drain-Source Breakdown Voltage:	10 V
-Gate-Source Cutoff Voltage:	- 3 V