English 简体中文 日本語

IFN411

Manufacturer InterFET
MPN IFN411
SPQ 100
ECCN --
Schedule B --
RoHS --
Datasheet IFN411.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Forward Transconductance - Min: 0.6 mS
-Manufacturer: InterFET
-Transistor Polarity: N-Channel
-Technology: Si
-Part # Aliases: U411
-Package / Case: TO-71-3
-Product Category: JFET
-Vds - Drain-Source Breakdown Voltage: 20 V
-Gate-Source Cutoff Voltage: - 3.5 V
-Drain-Source Current at Vgs=0: 5 mA
-Pd - Power Dissipation: 375 mW
-Factory Pack Quantity: 100
-Brand: InterFET
-RoHS:  Details
-Vgs - Gate-Source Breakdown Voltage: - 40 V
-Id - Continuous Drain Current: 200 uA
-Configuration: Dual
-Mounting Style: Through Hole

Copyright © 1997-2013 NetEase. All Rights Reserved.