| -Vce Saturation (Max) @ Ib, Ic |
2V @ 900mA, 9A |
| -Package / Case |
TO-3PL |
| -Transistor Type |
NPN |
| -Current - Collector (Ic) (Max) |
18A |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
160V |
| -Mounting Type |
Through Hole |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 1A, 5V |
| -Frequency - Transition |
30MHz |
| -Power - Max |
180W |
| -Supplier Device Package |
TO-3P(L) |
| -Part Status |
Active |
| -Manufacturer |
Toshiba Semiconductor and Storage |
| -Family |
Transistors - Bipolar (BJT) - Single |
| -Current - Collector Cutoff (Max) |
1µA (ICBO) |
| -Packaging |
Bulk |
