English 简体中文 日本語

2N4341

制造商 InterFET
制造商零件编号 2N4341
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 2N4341.pdf

询价

需求数量 目标价格
联系电话 姓名
公司 邮箱

产品参数

-Packaging: Reel
-Rds On - Drain-Source Resistance: 800 Ohms
-Manufacturer: InterFET
-Transistor Polarity: N-Channel
-Technology: Si
-RoHS:  Details
-Vgs - Gate-Source Breakdown Voltage: - 50 V
-Id - Continuous Drain Current: 100 pA
-Configuration: Single
-Mounting Style: Through Hole
-Forward Transconductance - Min: 2000 uS
-Drain-Source Current at Vgs=0: 9 mA
-Pd - Power Dissipation: 300 mW
-Factory Pack Quantity: 1
-Brand: InterFET
-Package / Case: TO-18-3
-Product Category: JFET
-Vds - Drain-Source Breakdown Voltage: 15 V
-Gate-Source Cutoff Voltage: - 6 V

Copyright © 1997-2013 NetEase. All Rights Reserved.