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| Demand quantity | Target price | ||
| Contact number | name | ||
| company | |||
| -Product: | RF JFET |
| -Gain: | 12 dB |
| -Manufacturer: | CEL |
| -Transistor Polarity: | N-Channel |
| -Technology: | GaAs |
| -RoHS: | Details |
| -Vgs - Gate-Source Breakdown Voltage: | - 3 V |
| -Id - Continuous Drain Current: | 70 mA |
| -NF - Noise Figure: | 0.45 dB |
| -Transistor Type: | HFET |
| -Mounting Style: | SMD/SMT |
| -Operating Frequency: | 12 GHz |
| -Forward Transconductance - Min: | 55 mS |
| -Pd - Power Dissipation: | 125 mW |
| -Factory Pack Quantity: | 1 |
| -Brand: | CEL |
| -Package / Case: | FTSMM-4 (M04) |
| -Product Category: | RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: | 4 V |
| -Type: | GaAs HFET |
| -Gate-Source Cutoff Voltage: | - 0.7 V |
| -Maximum Operating Temperature: | + 125 C |
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