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APTM10HM19FT3G

MOSFET 4N-CH 100V 70A SP3

制造商 Microchip Technology
制造商零件编号 APTM10HM19FT3G
标准包装 1000
ECCN --
Schedule B --
RoHS --
规格说明书 APTM10HM19FT3G.pdf

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产品参数

-FET Feature Standard
-Package / Case SP3
-Drain to Source Voltage (Vdss) 100V
-Current - Continuous Drain (Id) @ 25°C 70A
-Part Status Active
-Manufacturer Microsemi Corporation
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Chassis Mount
-Input Capacitance (Ciss) @ Vds 5100pF @ 25V
-Rds On (Max) @ Id, Vgs 21 mOhm @ 35A, 10V
-Power - Max 208W
-Supplier Device Package SP3
-Gate Charge (Qg) @ Vgs 200nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 4 N-Channel (H-Bridge)
-Vgs(th) (Max) @ Id 4V @ 1mA
-Operating Temperature -40°C ~ 150°C (TJ)
-Packaging Bulk

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