English 简体中文 日本語

FCPF650N80Z

800V,650mΩ,10A,N沟道功率MOSFET

Manufacturer onsemi
MPN FCPF650N80Z
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet FCPF650N80Z.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-FET Feature Standard
-Package / Case TO-220-3 Full Pack
-Drain to Source Voltage (Vdss) 800V
-Current - Continuous Drain (Id) @ 25°C 8A (Tc)
-Part Status Active
-Manufacturer Fairchild Semiconductor
-Series SuperFET® II
-Vgs(th) (Max) @ Id 4.5V @ 800µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Tube
-Rds On (Max) @ Id, Vgs 650 mOhm @ 4A, 10V
-Power - Max 30.5W
-Supplier Device Package TO-220F
-Gate Charge (Qg) @ Vgs 35nC @ 10V
-Category Discrete Semiconductor Products
-FET Type MOSFET N-Channel, Metal Oxide
-Family Transistors - FETs, MOSFETs - Single
-Mounting Type Through Hole
-Input Capacitance (Ciss) @ Vds 1565pF @ 100V

Copyright © 1997-2013 NetEase. All Rights Reserved.