| -Width: |
4 mm |
| -Rds On - Drain-Source Resistance: |
125 mOhms |
| -Pd - Power Dissipation: |
2.15 W |
| -Package / Case: |
SOIC-8 |
| -Configuration: |
Dual Dual Drain |
| -Unit Weight: |
0.002610 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
3.5 ns |
| -Manufacturer: |
Diodes Incorporated |
| -Transistor Polarity: |
P-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
35 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
- 60 V |
| -Transistor Type: |
2 P-Channel |
| -ECCN |
EAR99 |
| -Packaging: |
Reel |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Height: |
1.5 mm |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
10 ns |
| -Length: |
5 mm |
| -Series: |
ZXMC6A |
| -Factory Pack Quantity: |
500 |
| -Brand: |
Diodes Incorporated |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
- 3.9 A |
| -Rise Time: |
4.1 ns |
| -Maximum Operating Temperature: |
+ 150 C |
