| -Output Power: |
350 W |
| -Gain: |
28 dB |
| -Forward Transconductance - Min: |
8 mS |
| -Pd - Power Dissipation: |
648 W |
| -Operating Temperature Range: |
- 65 C to + 150 C |
| -Factory Pack Quantity: |
3 |
| -Brand: |
Microsemi |
| -Product Category: |
RF MOSFET Transistors |
| -Vgs th - Gate-Source Threshold Voltage: |
3.6 V |
| -Vgs - Gate-Source Voltage: |
40 V |
| -Maximum Operating Temperature: |
+ 150 C |
| -Operating Frequency: |
30 MHz |
| -Packaging: |
Reel |
| -Manufacturer: |
Microsemi |
| -Minimum Operating Temperature: |
- 65 C |
| -Transistor Polarity: |
N-Channel |
| -Technology: |
Si |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
20 A |
| -Vds - Drain-Source Breakdown Voltage: |
260 V |
| -Type: |
RF Power MOSFET |
