| -Emitter- Base Voltage VEBO: |
5 V |
| -DC Current Gain hFE Max: |
160 |
| -Collector- Base Voltage VCBO: |
230 V |
| -DC Collector/Base Gain hfe Min: |
80 |
| -Series: |
TTC5200 |
| -Transistor Polarity: |
NPN |
| -Brand: |
Toshiba |
| -Package / Case: |
2-21F1A |
| -Collector- Emitter Voltage VCEO Max: |
230 V |
| -Configuration: |
Single |
| -Maximum Operating Temperature: |
+ 150 C |
| -Collector-Emitter Saturation Voltage: |
3 V |
| -Packaging: |
Bulk |
| -Continuous Collector Current: |
15 A |
| -Manufacturer: |
Toshiba |
| -Pd - Power Dissipation: |
150 mW |
| -Factory Pack Quantity: |
100 |
| -RoHS: |
Details |
| -Product Category: |
Bipolar Transistors - BJT |
| -Gain Bandwidth Product fT: |
30 MHz |
| -Mounting Style: |
Through Hole |