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TTC5200(Q)

TTC5200(Q) , NPN 双极晶体管, 15 A, Vce=230 V, HFE:35, 30 MHz, 3针 TO-3P(L)封装

Manufacturer Toshiba
MPN TTC5200(Q)
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet TTC5200(Q).pdf
SP1027
Dollar $2.19837
RMB ¥18.25889
Stock type SP1027
Stock num 100
Stepped
num price
100+ $2.19837
SP1039
Dollar $1.43325
RMB ¥11.90407
Stock type SP1039
Stock num 39368
Stepped
num price
100+ $1.43325

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Product parameter

-Emitter- Base Voltage VEBO: 5 V
-DC Current Gain hFE Max: 160
-Collector- Base Voltage VCBO: 230 V
-DC Collector/Base Gain hfe Min: 80
-Series: TTC5200
-Transistor Polarity: NPN
-Brand: Toshiba
-Package / Case: 2-21F1A
-Collector- Emitter Voltage VCEO Max: 230 V
-Configuration: Single
-Maximum Operating Temperature: + 150 C
-Collector-Emitter Saturation Voltage: 3 V
-Packaging: Bulk
-Continuous Collector Current: 15 A
-Manufacturer: Toshiba
-Pd - Power Dissipation: 150 mW
-Factory Pack Quantity: 100
-RoHS:  Details
-Product Category: Bipolar Transistors - BJT
-Gain Bandwidth Product fT: 30 MHz
-Mounting Style: Through Hole

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