| -Operating Temperature - Junction |
175°C (Max) |
| -Capacitance @ Vr, F |
35pF @ 650V, 1MHz |
| -Supplier Device Package |
TO-220-2L |
| -Diode Type |
Silicon Carbide Schottky |
| -Category |
Discrete Semiconductor Products |
| -Current - Reverse Leakage @ Vr |
90µA @ 650V |
| -Mounting Type |
Through Hole |
| -Voltage - Forward (Vf) (Max) @ If |
1.7V @ 6A |
| -Current - Average Rectified (Io) |
6A (DC) |
| -Package / Case |
TO-220-2 |
| -Part Status |
Active |
| -Speed |
Fast Recovery =< 500ns, > 200mA (Io) |
| -Manufacturer |
Toshiba Semiconductor and Storage |
| -Family |
Diodes - Rectifiers - Single |
| -Voltage - DC Reverse (Vr) (Max) |
650V |
| -Packaging |
Tube |
