| -Collector-Emitter Saturation Voltage: |
0.3 V |
| -Product: |
Phototransistors |
| -Width: |
2 mm |
| -Maximum On-State Collector Current: |
100 mA |
| -Minimum Operating Temperature: |
- 40 C |
| -Half Intensity Angle Degrees: |
15 deg |
| -Height: |
2.7 mm |
| -Fall Time: |
2.3 us |
| -Manufacturer: |
Vishay |
| -Operating Supply Voltage: |
5 V |
| -Factory Pack Quantity: |
1000 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
70 V |
| -Rise Time: |
2 us |
| -Wavelength: |
880 nm |
| -Light Current: |
7 mA |
| -Lens Color/Style: |
Black |
| -Packaging: |
Bulk |
| -Collector-Emitter Breakdown Voltage: |
70 V |
| -Pd - Power Dissipation: |
100 mW |
| -Package / Case: |
SMD-2 |
| -Mounting Style: |
SMD/SMT |
| -Length: |
2.5 mm |
| -Peak Wavelength: |
950 nm |
| -Series: |
TEMT |
| -Brand: |
Vishay Semiconductors |
| -Product Category: |
Phototransistors |
| -Dark Current: |
200 nA |
| -Type: |
IR Chip |
| -Maximum Operating Temperature: |
+ 85 C |
