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STGD20N40LZ

STMicroelectronics STGD20N40LZ, N沟道 IGBT 晶体管, 25 A, Vce=425 V, 3针 DPAK封装

Manufacturer STMicroelectronics
MPN STGD20N40LZ
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Collector-Emitter Saturation Voltage: 1.5 V
-Continuous Collector Current Ic Max: 25 A
-Series: 300-400V IGBTs
-Minimum Operating Temperature: - 55 C
-Brand: STMicroelectronics
-Package / Case: DPAK-3
-Product Category: IGBT Transistors
-Configuration: Single
-Mounting Style: SMD/SMT
-Maximum Operating Temperature: + 175 C
-Packaging: Reel
-Manufacturer: STMicroelectronics
-Pd - Power Dissipation: 125 W
-Factory Pack Quantity: 2500
-RoHS:  Details
-Gate-Emitter Leakage Current: 625 uA
-Collector- Emitter Voltage VCEO Max: 425 V
-Unit Weight: 0.012346 oz
-Maximum Gate Emitter Voltage: 16 V

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