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STGB10NB37LZ

STMicroelectronics STGB10NB37LZ, N沟道 IGBT 晶体管, 20 A, Vce=375 V, 3针 D2PAK封装

Manufacturer STMicroelectronics
MPN STGB10NB37LZ
SPQ 50
ECCN --
Schedule B --
RoHS --
Datasheet STGB10NB37LZ.pdf

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Product parameter

-Power - Max 125W
-Current - Collector Pulsed (Icm) 40A
-Supplier Device Package D2PAK
-Current - Collector (Ic) (Max) 20A
-Category Discrete Semiconductor Products
-Gate Charge 28nC
-Series PowerMESH™
-Mounting Type Surface Mount
-Switching Energy 2.4mJ (on), 5mJ (off)
-Packaging Tube
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition 328V, 10A, 1 kOhm, 5V
-Td (on/off) @ 25°C 1.3µs/8µs
-Part Status Obsolete
-Manufacturer STMicroelectronics
-Voltage - Collector Emitter Breakdown (Max) 440V
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A
-Input Type Standard

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