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SSVBC846BPDW1T1G

TRANS NPN/PNP 65V SOT363

Manufacturer onsemi
MPN SSVBC846BPDW1T1G
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Collector-Emitter Saturation Voltage: - 0.3 V, 0.25 V
-Maximum DC Collector Current: - 100 mA, 100 mA
-Packaging: Reel
-Continuous Collector Current: 100 mA
-Manufacturer: ON Semiconductor
-Pd - Power Dissipation: 250 mW
-Transistor Polarity: NPN, PNP
-Brand: ON Semiconductor
-Package / Case: SOT-363
-Collector- Emitter Voltage VCEO Max: -65 V, 65 V
-Configuration: Dual
-Mounting Style: SMD/SMT
-Emitter- Base Voltage VEBO: - 5 V, 6 V
-DC Current Gain hFE Max: 475
-Collector- Base Voltage VCBO: -80 V, 80 V
-DC Collector/Base Gain hfe Min: 200
-Series: SSVBC846BPDW1T1G
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 3000
-RoHS:  Details
-Product Category: Bipolar Transistors - BJT
-Gain Bandwidth Product fT: 100 MHz
-Unit Weight: 0.000212 oz
-Maximum Operating Temperature: + 150 C

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