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SSM6N16FUTE85LF

MOSFET 2N-CH 20V 0.1A US6

Manufacturer Toshiba
MPN SSM6N16FUTE85LF
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Standard
-Package / Case 6-TSSOP, SC-88, SOT-363
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 100mA
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Vgs(th) (Max) @ Id 1.1V @ 100µA
-Operating Temperature 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 3 Ohm @ 10mA, 4V
-Power - Max 200mW
-Supplier Device Package US6
-Part Status Active
-Manufacturer Toshiba Semiconductor and Storage
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 9.3pF @ 3V

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