English 简体中文 日本語

SIS990DN-T1-GE3

MOSFET 2N-CH 100V 12.1A 1212-8

Manufacturer Vishay
MPN SIS990DN-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SIS990DN-T1-GE3.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Packaging: Reel
-Qg - Gate Charge: 5.2 nC
-Pd - Power Dissipation: 25 W
-Tradename: TrenchFET
-Vgs th - Gate-Source Threshold Voltage: 4 V
-Vgs - Gate-Source Voltage: 20 V
-Number of Channels: 2 Channel
-Typical Turn-On Delay Time: 8 ns
-Manufacturer: Vishay
-Transistor Polarity: N-Channel
-Brand: Vishay Semiconductors
-RoHS:  Details
-Id - Continuous Drain Current: 12.1 A
-Rise Time: 8 ns
-Maximum Operating Temperature: + 150 C
-Rds On - Drain-Source Resistance: 86 mOhms
-Minimum Operating Temperature: - 55 C
-Technology: Si
-Package / Case: PowerPak1212-8
-Configuration: Dual
-Mounting Style: SMD/SMT
-Fall Time: 6 ns
-Forward Transconductance - Min: 11 S
-Series: SIS
-Factory Pack Quantity: 3000
-Typical Turn-Off Delay Time: 8 ns
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: 100 V
-Transistor Type: 2 N-Channel

Copyright © 1997-2013 NetEase. All Rights Reserved.