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SIA907EDJT-T1-GE3

SiA907EDJT Series Dual P Channel 20 V 0.057 Ohm 7.8 W Mosfet - PowerPAK SC-70-6L

Manufacturer Vishay
MPN SIA907EDJT-T1-GE3
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet SIA907EDJT-T1-GE3.pdf

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Product parameter

-Packaging: Reel
-Qg - Gate Charge: 15 nC
-Technology: Si
-Package / Case: SC-70-6
-Vgs - Gate-Source Voltage: 12 V
-Mounting Style: SMD/SMT
-Fall Time: 10 ns
-Forward Transconductance - Min: 11 S
-Series: SIA
-Factory Pack Quantity: 3000
-Brand: Vishay Semiconductors
-RoHS:  Details
-Id - Continuous Drain Current: - 4.5 A
-Rise Time: 10 ns
-ECCN EAR99
-Rds On - Drain-Source Resistance: 57 mOhms
-Pd - Power Dissipation: 7.8 W
-Tradename: TrenchFET
-Configuration: Dual
-Unit Weight: 0.000988 oz
-Number of Channels: 2 Channel
-Typical Turn-On Delay Time: 5 ns
-Manufacturer: Vishay
-Transistor Polarity: P-Channel
-Part # Aliases: SIA907EDJT-GE3
-Typical Turn-Off Delay Time: 30 ns
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: - 20 V
-Transistor Type: 2 P-Channel

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