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SI7958DP-T1-GE3

MOSFET 2N-CH 40V 7.2A PPAK SO-8

Manufacturer Vishay
MPN SI7958DP-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SI7958DP-T1-GE3.pdf

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Product parameter

-Package / Case PowerPAK® SO-8 Dual
-FET Feature Logic Level Gate
-Drain to Source Voltage (Vdss) 40V
-Current - Continuous Drain (Id) @ 25°C 7.2A
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Rds On (Max) @ Id, Vgs 16.5 mOhm @ 11.3A, 10V
-Power - Max 1.4W
-Supplier Device Package PowerPAK® SO-8 Dual
-Gate Charge (Qg) @ Vgs 75nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Digi-Reel®

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