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SI5980DU-T1-GE3

MOSFET 2N-CH 100V 2.5A CHIPFET

Manufacturer Vishay
MPN SI5980DU-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SI5980DU-T1-GE3.pdf

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Product parameter

-Package / Case PowerPAK® ChipFET™ Dual
-FET Feature Standard
-Drain to Source Voltage (Vdss) 100V
-Current - Continuous Drain (Id) @ 25°C 2.5A
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 4V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Packaging Digi-Reel®
-Rds On (Max) @ Id, Vgs 567 mOhm @ 400mA, 10V
-Power - Max 7.8W
-Supplier Device Package PowerPAK® ChipFet Dual
-Gate Charge (Qg) @ Vgs 3.3nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 2 N-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 78pF @ 50V

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