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SI5935CDC-T1-E3

MOSFET 2P-CH 20V 4A 1206-8

Manufacturer Vishay
MPN SI5935CDC-T1-E3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Packaging: Reel
-Product: MOSFET Small Signal
-Minimum Operating Temperature: - 55 C
-Technology: Si
-Package / Case: ChipFET-8
-Configuration: Dual
-Unit Weight: 0.002998 oz
-Number of Channels: 2 Channel
-Typical Turn-On Delay Time: 10 ns
-Manufacturer: Vishay
-Transistor Polarity: P-Channel
-Channel Mode: Enhancement
-Part # Aliases: SI5935CDC-E3
-RoHS:  Details
-Id - Continuous Drain Current: 3.1 A
-Rise Time: 32 ns
-Maximum Operating Temperature: + 150 C
-Width: 1.65 mm
-Rds On - Drain-Source Resistance: 100 mOhms
-Pd - Power Dissipation: 1.3 W
-Tradename: TrenchFET
-Height: 1.1 mm
-Vgs - Gate-Source Voltage: 8 V
-Mounting Style: SMD/SMT
-Fall Time: 32 ns
-Length: 3.05 mm
-Series: SI5
-Factory Pack Quantity: 3000
-Brand: Vishay Semiconductors
-Typical Turn-Off Delay Time: 25 ns
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: - 20 V
-Transistor Type: 2 P-Channel

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