| -Packaging: |
Reel |
| -Product: |
MOSFET Small Signal |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Package / Case: |
ChipFET-8 |
| -Configuration: |
1 N-Channel, 1 P-Channel |
| -Unit Weight: |
0.002998 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
7 ns, 10 ns |
| -Manufacturer: |
Vishay |
| -Transistor Polarity: |
N-Channel, P-Channel |
| -Channel Mode: |
Enhancement |
| -Part # Aliases: |
SI5515CDC-E3 |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
4 A |
| -Rise Time: |
9 ns, 32 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Width: |
1.65 mm |
| -Rds On - Drain-Source Resistance: |
30 mOhms, 83 mOhms |
| -Pd - Power Dissipation: |
3.1 W |
| -Tradename: |
TrenchFET |
| -Height: |
1.1 mm |
| -Vgs - Gate-Source Voltage: |
8 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
10 ns, 6 ns |
| -Length: |
3.05 mm |
| -Series: |
SI5 |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
Vishay Semiconductors |
| -Typical Turn-Off Delay Time: |
30 ns, 25 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
20 V |
| -Transistor Type: |
1 N-Channel, 1 P-Channel |
| -ECCN |
EAR99 |
