English 简体中文 日本語

SI4943CDY-T1-E3

Dual P-Channel 20 V 0.0192 Ω 62 nC Surface Mount Mosfet - SOIC-8

Manufacturer Vishay
MPN SI4943CDY-T1-E3
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet SI4943CDY-T1-E3.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Package / Case 8-SOIC (0.154", 3.90mm Width)
-FET Feature Logic Level Gate
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 8A
-Part Status Active
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 3V @ 250µA
-Operating Temperature -50°C ~ 150°C (TJ)
-Packaging Tape & Reel (TR)
-Rds On (Max) @ Id, Vgs 19.2 mOhm @ 8.3A, 10V
-Power - Max 3.1W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 62nC @ 10V
-Category Discrete Semiconductor Products
-FET Type 2 P-Channel (Dual)
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 1945pF @ 10V
-ECCN EAR99

Copyright © 1997-2013 NetEase. All Rights Reserved.