| -Product: |
MOSFET |
| -Rds On - Drain-Source Resistance: |
20 mOhms, 21 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Package / Case: |
SOIC-8 |
| -Vgs - Gate-Source Voltage: |
+/- 20 V, +/- 20 V |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
7 ns, 18 ns |
| -Forward Transconductance - Min: |
27 S, 25 S |
| -Series: |
SI4 |
| -Factory Pack Quantity: |
2500 |
| -Typical Turn-Off Delay Time: |
17 ns, 40 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
40 V, - 40 V |
| -Type: |
TrenchFET Power MOSFET |
| -Maximum Operating Temperature: |
+ 150 C |
| -Packaging: |
Reel |
| -Qg - Gate Charge: |
6.5 nC, 21.7 nC |
| -Pd - Power Dissipation: |
2 W |
| -Tradename: |
TrenchFET |
| -Vgs th - Gate-Source Threshold Voltage: |
2.2 V, - 2.5 V |
| -Unit Weight: |
0.017870 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
11 ns, 42 ns |
| -Manufacturer: |
Vishay |
| -Transistor Polarity: |
N-Channel, P-Channel |
| -Brand: |
Vishay Semiconductors |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
6.8 A |
| -Rise Time: |
12 ns, 40 ns |
| -Transistor Type: |
1 N-Channel, 1 P-Channel |
| -ECCN |
EAR99 |
