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SI4511DY-T1-GE3

SI4511DY-T1-GE3, 双 N/P沟道 MOSFET 晶体管, 8针 SOIC封装

Manufacturer Vishay
MPN SI4511DY-T1-GE3
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Package / Case 8-SOIC (0.154", 3.90mm Width)
-FET Feature Logic Level Gate
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 7.2A, 4.6A
-Part Status Obsolete
-Manufacturer Vishay Siliconix
-Series TrenchFET®
-Vgs(th) (Max) @ Id 1.8V @ 250µA
-Operating Temperature -55°C ~ 150°C (TJ)
-Rds On (Max) @ Id, Vgs 14.5 mOhm @ 9.6A, 10V
-Power - Max 1.1W
-Supplier Device Package 8-SO
-Gate Charge (Qg) @ Vgs 18nC @ 4.5V
-Category Discrete Semiconductor Products
-FET Type N and P-Channel
-Family Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Packaging Digi-Reel®

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